PHI GENESIS XPS is the next generation of X-ray Photoelectron Spectrometry (XPS) which gives quantitative elemental composition and chemical state information about the sample surface (top 3 – 10 nm). PHI GENESIS XPS offers improved sensitivity through greater signal collection for elemental surface composition measurements and high-resolution binding energy chemical shift measurements of solid samples under high vacuum. It uses Al(Ka) radiation (1486 eV) and is equipped with the following advanced features:
- Monoatomic Ar ion source
- Bombards sample with a focused beam of energized Ar range of 0.3 – 4 keV.
- Provides surface cleaning and depth profile capabilities at various beam energies and raster sizes.
- Ar 2500+ Gas Cluster Ion Beam Gun (GCIB)
- Bombards sample with clusters of Ar ions at various beam energies.
- Provides surface cleaning and depth profiling with minimal sample damage and disruption to stoichiometry.
- Ideal for polymer samples and other samples easily damaged by traditional ion beam etching.
- Improved Angle Resolved XPS (ARXPS) with collection angle-limiting aperture.
- SXI imaging for precise analysis location
- Intro Chamber Camera
- Records top-down image of sample before entry for sample registration and easy navigation.
- SmartSoft-VersaProbeTM Software
- For improved sample throughput and data collection efficiency.
- Dual electron/ion flood gun for charge compensation
- 60mm transfer module for air sensitive samples
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Equipment Fee
Characterization Service 4
Core Facility
Gertrude E. and John M. Petersen Institute of NanoScience and Engineering
Location
Lower Campus
Equipment Type
Materials Characterization Techniques